1. What is Drift Mobility?

Definition: Drift mobility (μ) measures how quickly charge carriers (electrons or holes) move through a material when subjected to an electric field.

Purpose: It's a fundamental parameter in semiconductor physics that helps characterize material properties and device performance.

2. How Does the Calculator Work?

The calculator uses the formula:

Where:

• \( \mu \) — Drift mobility (m²/V·s)
• \( v_d \) — Drift velocity (m/s)
• \( E \) — Electric field (V/m)

Explanation: The drift velocity of charge carriers is divided by the applied electric field strength to determine their mobility.

3. Importance of Drift Mobility

Details: Higher mobility means faster device operation. It affects transistor speed, conductivity, and overall electronic device performance.

4. Using the Calculator

Tips: Enter the drift velocity in m/s and electric field in V/m. Both values must be positive numbers.

5. Frequently Asked Questions (FAQ)

Q1: What are typical mobility values?
A: In silicon at room temperature: electrons ~1400 cm²/V·s, holes ~450 cm²/V·s (note unit conversion to m²/V·s).

Q2: How is drift velocity measured?
A: Often through Hall effect measurements or time-of-flight experiments in semiconductor characterization.

Q3: What factors affect mobility?
A: Temperature, impurity concentration, crystal structure, and scattering mechanisms influence mobility.

Q4: What's the difference between drift and Hall mobility?
A: Hall mobility includes the Hall scattering factor, while drift mobility is the fundamental parameter from this equation.

Q5: How does mobility relate to conductivity?
A: Conductivity σ = n·e·μ, where n is carrier concentration and e is electron charge.